Guided path for forming a conductive filament in RRAM
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 15, 2018
Issued Date -
N/A
app pub date -
Dec 17, 2014
filing date -
May 2, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a non-volatile memory device, includes forming a first electrode above a substrate, forming a dielectric layer overlying the first electrode, forming an opening structure in a portion of the dielectric layer to expose a surface of the first electrode having an aspect ratio, forming a resistive switching material overlying the dielectric layer and filling at least a portion of the opening structure using a deposition process, the resistive switching material having a surface region characterized by a planar region and an indent structure, the indent structure overlying the first electrode, maintaining a first thickness of resistive switching material between the planar region and the first electrode, maintaining a second thickness of resistive switching material between the indent structure and the first electrode, wherein the first thickness is larger than the second thickness, and forming a second electrode overlying the resistive switching material including the indent structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully