Self-aligned multiple spacer patterning schemes for advanced nanometer technology
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United States of America Patent
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May 22, 2018
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app pub date -
Dec 13, 2016
filing date -
Jun 20, 2014
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Abstract
The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.
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