Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 22, 2018
Issued Date -
N/A
app pub date -
Jun 6, 2014
filing date -
Jun 13, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to mechanical polishing or chemical-mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. A second removal step in which macro-step bunching occurred in an epitaxial layer (71) is removed by heating the substrate (70) under Si vapor pressure may also be performed. Since the etching rate can be varied, etching rate in the first removal step is high, so that the modified layer can be removed in a short time. Meanwhile, etching rate in the second removal step is comparatively low, so that excessive removal of the epitaxial layer (71) can be prevented.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully