Selective formation of metal silicides

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United States of America Patent

PATENT NO 9981286
SERIAL NO

15064404

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Abstract

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Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.

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Patent Owner(s)

Patent OwnerAddress
ASM IP HOLDING B VVERSTERKERSTRAAT 8 ALMERE 1322 AP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Givens, Michael Eugene Phoenix, US 56 10041
Räisänen, Petri Gilbert, US 11 195
Sharma, Bed Gilbert, US 4 1021
Woodruff, Jacob Huffman Scottsdale, US 7 1212

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