Manufacturing method of cylindrical sputtering target material
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United States of America Patent
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May 29, 2018
Issued Date -
N/A
app pub date -
Feb 20, 2015
filing date -
Apr 11, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- C22F:CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS MET....
- B22D:CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY ....
- C21D:MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS....
- C22C:ALLOYS
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