Deposition of metal films using beta-hydrogen free precursors

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United States of America Patent

PATENT NO 9982345
SERIAL NO

15210352

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Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anthis, Jeffrey W San Jose, US 89 4744
Knapp, David Santa Clara, US 64 2341
Thompson, David San Jose, US 345 15589

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