Cleaning method, method of manufacturing semiconductor device and substrate processing apparatus
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United States of America Patent
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May 29, 2018
Issued Date -
N/A
app pub date -
Aug 9, 2017
filing date -
Aug 10, 2016
priority date (Note) -
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Abstract
A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.
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