Sputtered transparent conductive aluminum doped zinc oxide films
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United States of America Patent
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May 29, 2018
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app pub date -
Oct 4, 2013
filing date -
Oct 8, 2012
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Abstract
Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.
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