Fin patterns with varying spacing without fin cut

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9984877
APP PUB NO 20170330754A1
SERIAL NO

15627685

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Abstract

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Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of a plurality of mandrels using an angled deposition process. A second sidewall of one or more of the plurality of mandrels is masked. Second spacers are formed on a second sidewall of all unmasked mandrels. The second sidewall of the one or more of the plurality of mandrels is unmasked. The mandrels are etched away. Fins are formed from a substrate using the first and second spacers as a mask.

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Patent Owner(s)

Patent OwnerAddress
ELPIS TECHNOLOGIES INC1891 ROBERTSON ROAD SUITE 100 OTTAWA K2H 5B7

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bergendahl, Marc A Troy, US 100 1307
Cheng, Kangguo Schenectady, US 3099 32749
Sporre, John R Albany, US 86 699
Teehan, Sean Rensselaer, US 72 628

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