Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions

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United States of America Patent

PATENT NO 9984894
SERIAL NO

13196994

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Abstract

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Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.

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Patent Owner(s)

  • CREE, INC.; AUBURN UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Anant Chapel Hill, US 137 4122
Dhar, Sarit Raleigh, US 10 108
Ryu, Sei-Hyung Cary, US 116 1854
Williams, John Robert Opelika, US 6 78

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