High-voltage metal-oxide-semiconductor transistor and fabrication method thereof

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United States of America Patent

PATENT NO 9985129
SERIAL NO

15820467

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Abstract

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A high-voltage MOS transistor includes a semiconductor substrate, a gate oxide layer on the semiconductor substrate, a gate on the gate oxide layer, a spacer covering a sidewall of the gate, a source on one side of the gate, and a drain on the other side of the gate. The gate includes at least a first discrete segment and a second discrete segment. The first discrete segment is not in direct contact with the second discrete segment. The spacer fills into a gap between the first discrete segment and the second discrete segment.

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UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Kai-Kuen Keelung, TW 18 52
Chiang, Ping-Hung Hsinchu, TW 28 39
Hsiao, Shih-Yin Chiayi County, TW 61 167
Lee, Wen-Fang Hsinchu, TW 53 235
Li, Nien-Chung Hsinchu, TW 37 213
Liu, Kuan-Liang Hsinchu County, TW 57 288
Wang, Chih-Chung Hsinchu, TW 87 778
Yang, Ching-Chung Hsinchu, TW 37 79

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