Finfets and Methods of Forming Finfets
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United States of America Patent
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app pub date -
Mar 10, 2017
filing date -
Nov 29, 2016
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Abstract
An embodiment is a method including recessing a gate electrode over a semiconductor fin on a substrate to form a first recess from a top surface of a dielectric layer, forming a first mask in the first recess over the recessed gate electrode, recessing a first conductive contact over a source/drain region of the semiconductor fin to form a second recess from the top surface of the dielectric layer, and forming a second mask in the second recess over the recessed first conductive contact.
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