Process for production of graphene/silicon carbide ceramic composites

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United States of America Patent

PATENT NO 9988313
APP PUB NO 20150246851A1
SERIAL NO

14429546

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Abstract

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We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armors, cutting tools, microturbines or microrotors.

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Patent Owner(s)

Patent OwnerAddress
THE PENN STATE RESEARCH FOUNDATION304 OLD MAIN UNIVERSITY PARK PA 16802

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Belmonte, Manuel Madrid, ES 1 6
Gutierrez, Humberto R Louisville, US 1 6
Miranzo, Pilar Madrid, ES 1 6
Ocal, Carmen Molins de Rei, ES 1 6
Osendi, Maria Isabel Madrid, ES 1 6
Ramirez, Cristina Madrid, ES 1 6
Roman-Manso, Benito Zamora, ES 1 6
Terrones, Mauricio State College, US 19 93

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