Interface engineering during MGO deposition for magnetic tunnel junctions

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United States of America Patent

PATENT NO 9988715
SERIAL NO

14935330

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Abstract

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Methods of fabricating magnetic devices are described herein. Methods involve exposing a magnetic film, such as a CoFeB film, to a reducing agent before, during, or after depositing a metal oxide film using atomic layer deposition or chemical vapor deposition. Some methods include exposing the magnetic film in cycles involving exposure to a reducing agent, exposure to a magnesium-containing precursor, and exposure to an oxidant. Methods are suitable for depositing a magnesium oxide layer on a CoFeB layer to form part of a magnetic tunnel junction.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Draeger, Nerissa Sue Fremont, US 6 451
Nardi, Katie Lynn San Jose, US 10 315

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