Hybrid carbon hardmask for lateral hardmask recess reduction
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United States of America Patent
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Jun 5, 2018
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N/A
app pub date -
Jan 4, 2017
filing date -
Jan 20, 2016
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Abstract
Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.
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