Heat treatment method and heat treatment apparatus for semiconductor substrate

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United States of America Patent

PATENT NO 9991119
SERIAL NO

15272484

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Abstract

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A heat treatment method for a semiconductor substrate is provided which improves the shapes of the sharp corners at the opening and the bottom of a trench without using flammable or explosive gas while improving productivity. The heat treatment is performed on a semiconductor substrate with a recess formed therein in a treatment chamber where gas is sealed at a pressure exceeding a pressure in a molecular flow region.

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Patent Owner(s)

Patent OwnerAddress
CANON ANELVA CORPORATIONKAWASAKI-SHI KANAGAWA 215-8550

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shibagaki, Masami Kawasaki, JP 24 1114
Shinoda, Yasuko Kawasaki, JP 2 6

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