Method of fabricating integrated circuit device by using slurry composition

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United States of America Patent

PATENT NO 9991127
APP PUB NO 20170207100A1
SERIAL NO

15286976

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Abstract

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A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.

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Patent Owner(s)

Patent OwnerAddress
KCTECH CO LTD30 JE2GONGDAN 3-GIL MIYANG-MYEON ANSEONG-SI GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Bo-hyeok Yongin-si, KR 1 3
Hur, Won-ki Suwon-si, KR 2 8
Kim, Sang-kyun Hwaseong-si, KR 81 390
Lee, Jae-hak Yongin-si, KR 27 163
Park, Sang-hyun Hwaseong-si, KR 162 2979

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