Lithographic technique incorporating varied pattern materials

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United States of America Patent

PATENT NO 9991132
APP PUB NO 20160307769A1
SERIAL NO

14689288

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Abstract

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A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a workpiece having a material layer disposed on a substrate. A first set of fins is formed on the material layer, and a second set of fins is formed on the material layer interspersed between the first set of fins. The second set of fins have a different etchant sensitivity from the first set of fins. A first etching process is performed on the first set of fins and configured to avoid substantial etching of the second set of fins. A second etching process is performed on the second set of fins and configured to avoid substantial etching of the first set of fins. The material layer is etched to transfer a pattern defined by the first etching process and the second etching process.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Kuang Hsinchu County, TW 130 732
Chen, De-Fang Hsinchu, TW 63 328
Gau, Tsai-Sheng HsinChu, TW 141 1590
Hung, Chi-Cheng Miaoli County, TW 85 657
Lin, Wei-Liang HsinChu, TW 90 522
Liu, Ru-Gun Hsinchu County, TW 404 6961
Tseng, Chin-Yuan Hsin-Chu, TW 27 111

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