Method for etch-based planarization of a substrate

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United States of America Patent

PATENT NO 9991133
APP PUB NO 20180047584A1
SERIAL NO

15675372

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Abstract

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Techniques herein provide an etch-based planarization technique. An initial film is deposited on a substrate. Deposition of this initial film results in a non-planar film because of differences in area density of underlying structures (for example, open areas compared to closely spaced trenches). Etch processes are executed that use a reverse lag RIE process to planarize the initial film, and then another coat of the film material can be deposited, resulting in a planar surface. Such techniques can planarized substrates without using chemical mechanical polishing (CMP).

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDAKASAKA BIZ TOWER 3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huli, Lior Delmar, US 30 491
Mohanty, Nihar Clifton Park, US 30 1079
Pereira, Cheryl Loudonville, US 2 18

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