Etching method and etching apparatus

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United States of America Patent

PATENT NO 9991138
SERIAL NO

15219096

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Abstract

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An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO 107-6325
CENTRAL GLASS CO LTDUBE-SHI YAMAGUCHI 755-0001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Jun Yamanashi, JP 171 1539
Miyazaki, Tatsuo Tokyo, JP 24 385
Tachibana, Mitsuhiro Yamanashi, JP 39 1207
Takeya, Koji Yamanashi, JP 14 355
Yamauchi, Kunihiro Yamaguchi, JP 14 351
Yao, Akifumi Yamaguchi, JP 51 410

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