Semiconductor die singulation methods
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United States of America Patent
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Jun 5, 2018
Issued Date -
N/A
app pub date -
Jun 22, 2016
filing date -
Jun 22, 2016
priority date (Note) -
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Abstract
Methods of singulating semiconductor die. Specific implementations may include: providing a semiconductor wafer including a plurality of die located on a first side of the semiconductor wafer where the plurality of die include a desired thickness. The method may include etching a plurality of trenches into the semiconductor wafer from the first side of the semiconductor wafer where the plurality of trenches is located adjacent to a perimeter of the plurality of die. A depth of the plurality of trenches may be greater than the desired thickness of the plurality of die. The method may also include mounting the first side of the semiconductor wafer to a tape, thinning a second side of the semiconductor wafer, exposing the plurality of trenches while thinning the second side, and singulating the plurality of die through exposing the plurality of trenches.
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