Germanium dual-fin field effect transistor

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United States of America Patent

PATENT NO 9991168
SERIAL NO

15210156

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Abstract

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In one example, a field effect transistor includes a pair of fins positioned in a spaced apart relation. Each of the fins includes germanium. Source and drain regions are formed on opposite ends of the pair of fins and include silicon. A gate is wrapped around the pair of fins, between the source and drain regions.

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Patent Owner(s)

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ELPIS TECHNOLOGIES INC1891 ROBERTSON ROAD SUITE 100 OTTAWA K2H 5B7

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balakrishnan, Karthik White Plains, US 339 2298
Cheng, Kangguo Schenectady, US 3099 32749
Hashemi, Pouya White Plains, US 602 5206
Reznicek, Alexander Troy, US 1451 12717

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