Semiconductor device
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United States of America Patent
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Jun 5, 2018
Issued Date -
N/A
app pub date -
Jun 2, 2017
filing date -
Apr 3, 2014
priority date (Note) -
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Abstract
A variable capacitance device that includes a semiconductor substrate, a redistribution layer disposed on a surface of the semiconductor substrate, and a plurality of terminal electrodes including first and second input/output terminals, a ground terminal and a control voltage application terminal. Moreover, a variable capacitance element section is formed in the redistribution layer from a pair of capacitor electrodes connected to the first and second input/output terminals, respectively, and a ferroelectric thin film disposed between the capacitor electrodes. Further, an ESD protection element is connected between the one of the input/output terminals and the ground terminal is formed on the surface of the semiconductor substrate.
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