Method for producing semiconductor laser element

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United States of America Patent

PATENT NO 9991671
APP PUB NO 20170077672A1
SERIAL NO

15258868

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Abstract

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A method for producing a semiconductor laser element includes providing a semiconductor wafer comprising: a nitride semiconductor substrate, and a semiconductor stack located on the substrate, the semiconductor stack including a plurality of nitride semiconductor layers; forming in the substrate a fissure starting point and a fissure extending from the fissure starting point; forming a cleavage reference portion extending parallel to a cleavage plane of the semiconductor wafer as estimated from a plan view shape of the fissure; and cleaving the semiconductor wafer parallel to the cleavage reference portion to thereby obtain resonator end faces.

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Patent Owner(s)

  • NICHIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koizumi, Hiroki Tokushima, JP 13 67
Sakata, Hiroki Tokushima, JP 19 104

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