Solution for EUV power increment at wafer level

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United States of America Patent

PATENT NO 9992856
SERIAL NO

15251609

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure relates to a photolithography radiation source having an angled primary laser, and an associated method of formation. In some embodiments, the photolithography radiation source has a fuel droplet generator that provides fuel droplets to a source vessel along a first trajectory. A primary laser is configured to generate a primary laser beam along a second trajectory that intersects the first trajectory. The primary laser beam is configured to ignite a plasma from the plurality of fuel droplets that emits radiation. A collector mirror is configured to focus the radiation to an exit aperture of the source vessel. The primary laser beam does not intersect the exit aperture.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Yiming Zhubei, TW 2 8
Shen, En-Chao Hsinchu, TW 3 9

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