Copper compound, starting material for forming thin film, and method for manufacturing thin film
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United States of America Patent
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Jun 12, 2018
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Apr 8, 2015
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May 14, 2014
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Abstract
This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.
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