Six-degree-of-freedom displacement measurement method for exposure region on silicon wafer stage

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United States of America Patent

PATENT NO 9995569
SERIAL NO

15568118

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Abstract

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A six-degree-of-freedom displacement measurement method for an exposure region on a wafer stage, the wafer stage comprises a coil array and a movable platform. A planar grating is fixed below a permanent magnet array of the movable platform. A reading head is fixed in a gap of the coil array. A measurement region is formed on the planar grating by an incident measurement light beam of the reading head. The reading head measures the six-degree-of-freedom displacement of the measurement region, so that the six-degree-of-freedom displacement of the exposure region is obtained through calculation. In the method, the six-degree-of-freedom displacement of the exposure region at any time is measured; the measurement complexity is reduced and the measurement precision is improved, and especially, the six-degree-of-freedom displacement of the exposure region can be precisely measured at any time even if the movable platform has high flexibility.

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Patent Owner(s)

  • 501 TSINGHUA UNIVERSITY; BEIJING U-PRECISION TECH CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Anlin Beijing, CN 5 15
Cheng, Rong Beijing, CN 30 45
Hu, Chuxiong Beijing, CN 5 7
Hu, Jinchun Beijing, CN 28 43
Liu, Feng Beijing, CN 504 7213
Mu, Haihua Beijing, CN 17 30
Song, Yujing Beijing, CN 5 10
Xu, Dengfeng Beijing, CN 33 286
Yang, Kaiming Beijing, CN 29 52
Zhang, Ming Beijing, CN 830 6666
Zhi, Fan Beijing, CN 3 4
Zhu, Yu Beijing, CN 359 3318

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