Silicon composite substrates

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United States of America Patent

PATENT NO 9997353
SERIAL NO

15498468

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Abstract

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A composite substrate includes a single crystal silicon layer on a glass or glass ceramic layer on a support layer can be used to form GaN layer without cracks. The glass or glass ceramic layer can have a set point and/or strain point below the deposition temperature of GaN, which can assist in releasing stress in the deposited GaN layer. Additionally, the composite substrate can be exposed to a heated and dry hydrogen ambient to reduce an oxide layer between the silicon layer and the glass or glass ceramic layer, to allow the formation of free standing GaN layer.

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Patent Owner(s)

Patent OwnerAddress
KUMAR ANANDA HFREMONT CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kumar, Ananda H Fremont, US 120 3509
Kumar, Srinivas H Fremont, US 8 77
Nguyen, Tue Fremont, US 129 9000

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