Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

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United States of America Patent

PATENT NO 9997354
APP PUB NO 20170263441A1
SERIAL NO

15448519

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Abstract

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There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

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Patent Owner(s)

  • HITACHI KOKUSAI ELECTRIC INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moriya, Atsushi Toyama, JP 54 1243
Nakaiso, Naoharu Toyama, JP 14 348
Orihashi, Yugo Toyama, JP 21 156
Yuasa, Kazuhiro Toyama, JP 62 1432

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