Semiconductor device and method of fabricating the same

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United States of America Patent

PATENT NO 9997532
APP PUB NO 20160204115A1
SERIAL NO

14731115

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Abstract

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A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Sung Soon Seoul, KR 23 52
Ko, Min Sung Chungcheongbuk-do, KR 12 34
Shin, Wan Sup Gyeonggi-do, KR 24 34

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