Photodetector on silicon-on-insulator

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United States of America Patent

PATENT NO 9997550
APP PUB NO 20150249179A1
SERIAL NO

14627038

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Abstract

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A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.

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Patent Owner(s)

  • STMICROELECTRONICS SA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rauber, Bruno Goncelin, FR 3 4

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