ELECTRON BEAM PROCESS DURING DAMASCENE PROCESSING

Canada Patent

APP PUB NO CA-2368265-A1
SERIAL NO

2368265

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Abstract

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A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring line s are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.

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Patent Owner(s)

Patent OwnerAddress
ELECTRON VISION CORPUS

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Inventor(s)

Inventor Name Address
ROSS MATTHEW SAN FRANCISCO CA

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