Scintillator

China Patent

PATENT NO 103732722
APP PUB NO CN-103732722-A
SERIAL NO

201280039480

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Abstract

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The present invention is intended to improve cesium iodide having CsI as a precursor, in which thallium is doped: afterglow characteristics of thallium (CsI: Tl). By doping bismuth (Bi) into such a crystalline material containing CsI (cesium iodide) as a host material and thallium (Tl) as a luminescence center, the afterglow characteristics of the scintillator can be improved.

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Patent Owner(s)

Patent OwnerAddress
NIHON KESSHO KOGAKU CO LTDJP810-5 NOBE-CHO GUNMA TATEBAYASHI-CITY 374-0047

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Inventor(s)

Inventor Name Address
YANAGIDA TAKESHI -
SONG BENJIN -
TOTSUKA DAISUKE SAITAMA 362-0021
JI CHUANZHANG -

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