DISPLACEMENT LIQUID FOR SEMICONDUCTOR CIRCUIT PATTERN DRYING, AND DRYING METHOD

European Patent Office Patent

APP PUB NO EP-3155657-A1
SERIAL NO

15766243

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Abstract

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Problem: An object of the present invention is to provide a replacement solution for drying a semiconductor pattern and a method for drying a semiconductor pattern, that can prevent breakdown of an intricate semiconductor pattern with a high aspect ratio, when drying after a washing process after edging is completed in a semiconductor manufacturing process. Resolution Means: The present invention provides a replacement solution for drying a semiconductor pattern and method, containing a hydrofluoro ether and/or hydrofluorocarbon, that is completely miscible with isopropyl alcohol, has a boiling point of 70C or higher, and has surface tension under atmospheric conditions of 10 mN/m or lower when heated to a temperature below the boiling point.

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Patent Owner(s)

Patent OwnerAddress
DU PONT-MITSUI FLUOROCHEMICALS CO LTDJPTOKYO 101-0064

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Inventor(s)

Inventor Name Address
KIKUCHI HIDEAKI MINAMISAKU-GUN NAGANO 384-0503
MATSUMOTO TAKANORI TAKATSU-KU KAWASAKI KANAGAWA 213-0012
ITO MIKI OHTA-KU TOKYO

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