SOI CMOS device having body extension for providing sidewall channel stop and bodytie
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United States of America Statutory Invention Reg
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-
May 2, 1995
Grant Date -
N/A
app pub date -
Oct 21, 1991
filing date -
Oct 21, 1991
priority date (Note) -
N/A
status (Latency Note)
Importance
Abstract
An SOI/SOS thin film MOS mesa architecture has its body/channel region extended beyond the source and drain regions and the impurity concentration is increased at a selected portion (e.g. an end portion) of the extended body region, so as to provide both a body tie access location which enables the body/channel region to be terminated to a prescribed bias voltage (e.g. Vss), and a channel stop region that is effective to functionally interrupt a current leakage path or `parasitic` N-channel that may be induced along sidewall surface of the P-type material of the body/channel region. In another embodiment, ionizing radiation-induced inversion of the sidewalls of the P-type body/channel region is prevented by an asymmetric sidewall channel stop structure formed in opposite end portions of the source region.
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