Integrated power factor correction and MOSFET integrated circuit
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United States of America Patent
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Mar 2, 2004
Grant Date -
Oct 2, 2003
app pub date -
Mar 26, 2002
filing date -
Mar 26, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides power quality correction circuitry integrated into a single IC, therefore saving space and reducing costs while increase potential and frequency. An embodiment of the present invention discloses an integrated circuit with integrated power factor correction circuit (PFC) and MOSFET circuit. Another embodiment of the present invention provides a power factor correction circuit, a pulse width modulation (PWM) control circuit, and MOSFET circuits integrated into a single IC. Therefore, signals provided by the present invention ensure a smooth and high quality power to the system, thus improving the quality and performance of the overall system.
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