Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same

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United States of America Patent

PATENT NO 11756999
APP PUB NO 20210288144A1
SERIAL NO

17205670

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Abstract

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In at least one cell region, a semiconductor device includes fin patterns and at least one overlying gate structure. The fin patterns (dummy and active) are substantially parallel to a first direction. Each gate structure is substantially parallel to a second direction (which is substantially perpendicular to the first direction). First and second active fin patterns have corresponding first and second conductivity types. Each cell region, relative to the second direction, includes: a first active region which includes a sequence of three or more consecutive first active fin patterns located in a central portion of the cell region; a second active region which includes one or more second active fin patterns located between the first active region and a first edge of the cell region; and a third active region which includes one or more second active fin patterns located between the first active region and a second edge of the cell region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Ting-Wei Hsinchu, TW 165 750
Lu, Lee-Chung Hsinchu, TW 196 1717
Tien, Li-Chun Hsinchu, TW 254 2004
Yang, Jung-Chan Hsinchu, TW 86 127
Zhuang, Hui-Zhong Hsinchu, TW 262 750

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