Methods of fabricating capacitor and semiconductor device and semiconductor devices and apparatus including the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 4, 2022
Grant Date -
Feb 4, 2021
app pub date -
Jul 17, 2020
filing date -
Jul 30, 2019
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully