Ion implanter and method of manufacturing semiconductor device
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United States of America Patent
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Jul 24, 2007
Grant Date -
Jan 26, 2006
app pub date -
Jun 30, 2005
filing date -
Jun 30, 2004
priority date (Note) -
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status (Latency Note)
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Abstract
An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.
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