Materials for photoresist, negative-tone photoresist composition, method of forming resist pattern, and semiconductor device
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United States of America Patent
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Feb 9, 2010
Grant Date -
Jun 7, 2007
app pub date -
Dec 1, 2006
filing date -
Dec 2, 2005
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Abstract
With the tendency of reducing the size of semiconductor circuit patterns, edge roughness on a resist pattern is increased when pattern dimensions required are close to the size of the resist molecules. Provided is a technique for preventing degradation of the device performance and negative effects over the system performance caused by the phenomena. A photoresist compound is used, which is a molecule having functional groups that are chemically converted due to an action of an acid with reduced solubility in alkaline developer.
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