Fabrication method and fabrication apparatus of group III nitride crystal substance
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United States of America Patent
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Sep 15, 2009
Grant Date -
Jun 28, 2007
app pub date -
Dec 22, 2006
filing date -
Dec 28, 2005
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Abstract
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
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