Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device

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United States of America Patent

PATENT NO 8519733
APP PUB NO 20120013349A1
SERIAL NO

13044985

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Abstract

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A measurement terminal is arranged at an edge of a semiconductor wafer to be apart from a gate electrode and a source electrode formed in a surface portion on one side in a thickness direction of a semiconductor wafer so that an electrode contact portion is in contact with a drain electrode on the other side in the thickness direction of the semiconductor wafer and that a terminal contact portion is exposed to the one side in the thickness direction of the semiconductor wafer. A probe terminal is brought into contact with the terminal contact portion of the measurement terminal and the probe terminal is brought into contact with the gate electrode and the source electrode, to thereby measure electrical characteristics of a MOSFET.

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Patent Owner(s)

  • MITSUBISHI ELECTRIC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Narazaki, Atsushi Tokyo, JP 37 289

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