EPI defect reduction using rapid thermal annealing
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United States of America Patent
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Nov 15, 1988
Grant Date -
N/A
app pub date -
Oct 19, 1987
filing date -
Oct 19, 1987
priority date (Note) -
Expired
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Abstract
Formation of defects in epi-layers above buried layers, particularly above arsenic buried layers, is substantially reduced by providing a brief high temperature Rapid Thermal Annealing (RTA) step after buried layer implantation, annealing-activation, and junction drive-in and before epi-layer growth. Among other things, the RTA step reduces the formation of arsenic precipitates which is frequently a consequence of slow cools commonly associated with conventional furnace activation-annealing, junction drive-in, and delineation oxidation prior to epi-layer growth.
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