Low power magnetoresistive random access memory elements
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United States of America Patent
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Feb 12, 2008
Grant Date -
Feb 15, 2007
app pub date -
Oct 16, 2006
filing date -
Nov 24, 2004
priority date (Note) -
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Abstract
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation H.sub.win.apprxeq.(Hsat-.sigma..sub.sat)-(Hsw+.sigma..sub.sw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation H.sub.SW.apprxeq. {square root over (H.sub.kH.sub.SAT)}, where H.sub.k represents a total anisotropy and H.sub.SAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. H.sub.k, H.sub.SAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.
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