Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 11729981
APP PUB NO 20220223620A1
SERIAL NO

17707469

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Abstract

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The present technology provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel structure, insulating structures surrounding the channel structure and stacked to be spaced apart from each other, interlayer insulating films surrounding the insulating structures, respectively, and a gate electrode extending from between the interlayer insulating films to between the insulating structures and surrounding the channel structure. The insulating structures may include protrusion portions extending to cover edges of the interlayer insulating films facing the channel structure, and the gate electrode may extend between the protrusion portions which are adjacent to each other.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Gil Bok Daejeon, KR 20 65
Seo, Moon Sik Gyeonggi-do, KR 19 35

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