Wavelet analysis for laser ultrasonic measurement of material properties
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United States of America Patent
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Mar 3, 1998
Grant Date -
N/A
app pub date -
Apr 18, 1996
filing date -
Apr 18, 1996
priority date (Note) -
Expired
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Abstract
A laser ultrasonics technique is used to characterize a composite dispersive response signal from a sample under analysis, such as a semiconductor wafer. Rather than measuring individual acoustic wave velocities at specific frequencies, an entire dispersive response signal is analyzed. In a presently preferred embodiment of this invention the entire dispersive response signal is analyzed using a wavelet-based technique, such as a discrete wavelet transform analysis technique. The discrete wavelet transform analysis technique is shown to provide an accurate, non-contact measurement of the temperature of the wafer.
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