Semiconductor device and manufacturing method thereof
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United States of America Patent
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-
Jul 21, 1992
Grant Date -
N/A
app pub date -
Feb 9, 1989
filing date -
Feb 12, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a MOSFET of an LDD structure, a side wall is made conductive and connected to a gate through a resistance thereby to cause hot carriers taken into the side wall to be discharged to a gate through the resistance, whereby a channel resistance is prevented from being increased by an effect of carriers accumulated in the side wall. As a result, a reliable MOSFET with a short channel can be provided which is not degraded even if it is used for a long time.
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