Semiconductor light emitting element and manufacturing method thereof
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United States of America Patent
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Sep 30, 2003
Issued Date -
N/A
app pub date -
Oct 28, 2002
filing date -
Dec 21, 1999
priority date (Note) -
Expired
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Abstract
There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.
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