Thin film transistor, method of fabricating the thin film transistor, and display device including the thin film transistor
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United States of America Patent
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Nov 23, 2010
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Jun 13, 2008
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Jun 13, 2007
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Abstract
+2.4E-12L+c, wherein Ioff (A) is the leakage current of the semiconductor layer, W (mm) is the width of the channel region, L (μm) is the length of the channel region, and “c” is a constant ranging from 2.5E-13 to 6.8E-13.
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