METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION STRUCTURE
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United States of America Patent
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Aug 25, 2009
Grant Date -
Sep 10, 2009
app pub date -
Mar 4, 2008
filing date -
Mar 4, 2008
priority date (Note) -
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Abstract
In a particular illustrative embodiment, a method of forming a magnetic tunnel junction (MTJ) device is disclosed that includes forming a trench in a substrate. The method further includes depositing a magnetic tunnel junction (MTJ) structure within the trench. The MTJ structure includes a bottom electrode, a fixed layer, a tunnel barrier layer, a free layer, and a top electrode. The method also includes planarizing the MTJ structure. In a particular example, the MTJ structure is planarized using a Chemical Mechanical Planarization (CMP) process.
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